数据搜索系统，热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

预览 PDF HTML

UT2327G-AE3-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 UT2327G-AE3-R
功能描述  P-CHANNEL ENHANCEMENT MODE POWER MOSFET
PDF  5 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

UT2327G-AE3-R 数据表(HTML) 2 Page - Unisonic Technologies

  UT2327G-AE3-R Datasheet HTML 1Page - Unisonic Technologies UT2327G-AE3-R Datasheet HTML 2Page - Unisonic Technologies UT2327G-AE3-R Datasheet HTML 3Page - Unisonic Technologies UT2327G-AE3-R Datasheet HTML 4Page - Unisonic Technologies UT2327G-AE3-R Datasheet HTML 5Page - Unisonic Technologies  
Zoom Inzoom in Zoom Outzoom out
 2 / 5 page
background image
UT2327
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R502-108.C
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATING
UNIT
Drain-Source Voltage
VDS
- 20
V
Gate-Source Voltage
VGS
± 12
V
Continuous Drain Current (Note 3)
TA=25°C
ID
-2.6
A
TA=70°C
-2.1
A
Pulsed Drain Current (Note 1, 2)
IDM
-10
A
Total Power Dissipation (TA=25°C)
PD
1.38
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATING
UNIT
Junction to Ambient (Note 3)
θJA
90
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=-250uA
-20
V
Drain-Source Leakage Current
TJ=25°C
IDSS
VDS=-20V, VGS=0V
-1
uA
TJ=70°C
VDS=-16V, VGS=0V
-10
uA
Gate-Source Leakage Current
IGSS
VGS=±12V
±100
nA
Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ Reference to 25℃, ID=-1mA
-0.1
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=-250uA
-0.5
V
Drain-Source On-State Resistance (Note 2)
RDS(ON)
VGS=-5V, ID=-2.8A
130
mΩ
VGS=-2.8V, ID=-2.0A
190
mΩ
Forward Transconductance
gFS
VDS=-5V, ID=-2.8A
4.4
S
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VGS=0V, VDS=-6V, f=1.0MHz
295
pF
Output Capacitance
COSS
170
pF
Reverse Transfer Capacitance
CRSS
65
pF
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note 2)
tD(ON)
VDS=-15V, VGS=-10V,
ID=-1A, RG=6Ω, RD=15Ω
5.2
ns
Turn-ON Rise Time
tR
9.7
ns
Turn-OFF Delay Time
tD(OFF)
19
ns
Turn-OFF Fall Time
tF
29
ns
Total Gate Charge (Note 2)
QG
VDS=-6V, VGS=-5V, ID=-2.8A
5.2
10
nC
Gate-Source Charge
QGS
1.36
nC
Gate-Drain Charge
QGD
0.6
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note2)
VSD
TJ=25℃, IS=-1.6A, VGS=0V
-1.2
V
Maximum Continuous Drain-Source Diode
Forward Current
IS
VD=VG=0V, VS=-1.2V
-1
A
Maximum Pulsed Drain-Source Diode
Forward Current (Note 1)
ISM
-10
A
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle ≤2%.
3. Surface mounted on 1 in
2 copper pad of FR4 board; 270℃/W when mounted on min.



Html Pages

1 2 3 4 5


数据表 下载

Go To PDF Page


链接网址



ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   数据表链接    |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com