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UT2340G-AE3-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 UT2340G-AE3-R
功能描述  P-CHANNEL ENHANCEMENT MOSFET
PDF  5 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

UT2340G-AE3-R 数据表(HTML) 2 Page - Unisonic Technologies

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UT2340
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R502-162.D
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-20
V
Gate-Source Voltage
VGSS
±8
V
Continuous Drain Current (Note 3)
ID
-2
A
Pulsed Drain Current (Note 1, 2)
IDM
-10
A
Total Power Dissipation
PD
0.46
W
Junction Temperature
TJ
+150
°C
Strong Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction to Ambient (Note 3)
θJA
250
°C/W
Junction to Case
θJC
75
°C/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS =0 V, ID =-250 µA
-20
V
Drain-Source Leakage Current
IDSS
VDS=-16V, VGS =0 V
-1
µA
Gate-Source Leakage Current
IGSS
VGS = ±8 V, VDS = 0 V
±100
nA
Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ ID=-250μA,Referenced to 25°C
-15
mV/℃
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS =VGS, ID =-250 µA
-0.4
-0.9
-1.5
V
Drain-Source On-State Resistance (Note 2)
RDS(ON)
VGS =-4.5V, ID =-2A
52
70
mΩ
VGS =-2.5 V, ID =-1.7A
78
110
mΩ
VGS=-1.8V, ID =-1.2A
210
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=-10V, VGS =0V, f=1.0MHz
600
pF
Output Capacitance
COSS
175
pF
Reverse Transfer Capacitance
CRSS
80
pF
SWITCHING PARAMETERS
Turn-ON Delay Time (Note 2)
tD(ON)
VDD=-5V,ID=-0.5A,VGS =-4.5V,
RGEN =6 Ω
6
12
ns
Turn-ON Rise Time
tR
9
18
ns
Turn-OFF Delay Time
tD(OFF)
31
50
ns
Turn-OFF Fall Time
tF
26
42
ns
Total Gate Charge (Note 2)
QG
VDS=-10V, VGS =-4.5V, ID=-2A
8
11
nC
Gate-Source Charge
QGS
1.3
nC
Gate-Drain Charge
QGD
2.2
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage(Note2)
VSD
VGS =0V, IS = -0.42A (Note )
-0.7
-1.2
V
Maximum Continuous Drain-Source Diode
Forward Current
IS
-0.42
A
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300μs, duty cycle ≤2%.
3. Surface mounted on 1 in
2 copper pad of FR4 board; 270°C/W when mounted on min.



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