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UT3414G-AE3-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 UT3414G-AE3-R
功能描述  N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
PDF  4 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

UT3414G-AE3-R 数据表(HTML) 2 Page - Unisonic Technologies

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UT3414
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R502-248.F
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
±8
V
Continuous Drain Current
ID
4.2
A
Pulsed Drain Current
IDM
15
A
Power Dissipation
PD
1.4
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction to Ambient
θJA
100
125
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
20
V
Drain-Source Leakage Current
IDSS
VDS=16V, VGS=0V
1
µA
Gate-Source Leakage Current
IGSS
VDS=0V, VGS=±8V
100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
0.4
0.6
1
V
On State Drain Current
ID(ON)
VDS=5V, VGS=4.5V
15
A
Static Drain-Source On-Resistance
RDS(ON)
VGS=4.5V, ID=4.2A
41
50
mΩ
VGS=2.5V, ID=3.7A
52
63
VGS=1.8V, ID=3.2A
67
87
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=10V, VGS=0V, f=1.0MHz
436
pF
Output Capacitance
COSS
66
pF
Reverse Transfer Capacitance
CRSS
44
pF
SWITCHING PARAMETERS
Turn ON Delay Time
tD(ON)
VDS=10V, VGS=5V, RL=2.7Ω
RG=6Ω
5.5
ns
Turn ON Rise Time
tR
6.3
ns
Turn OFF Delay Time
tD(OFF)
40
ns
Turn OFF Fall-Time
tF
12.7
ns
Total Gate Charge
QG
VDS=10V, ID=4.2A, VGS=4.5V
6.2
nC
Gate Source Charge
QGS
1.6
nC
Gate Drain Charge
QGD
0.5
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
VGS=0V, IS=1A
0.76
1
V
Maximum Body-Diode Continuous
Current
IS
2
A
Body Diode Reverse Recovery Time
tRR
IF=4A, dI/dt=100A/μs
12.3
ns
Body Diode Reverse Recovery
Charge
QRR
IF=4A, dI/dt=100A/μs
3.5
nC



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