UT3419G-AE2-R datasheet(1/4 Pages) UTC

部件名	UT3419G-AE2-R

功能描述	ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

PDF	4 Pages

Scroll/Zoom	100%

制造商	UTC [Unisonic Technologies]

网页	http://www.utc-ic.com

标志

1 / 4 page

UNISONIC TECHNOLOGIES CO., LTD

UT3419

Power MOSFET

www.unisonic.com.tw

1 of 4

QW-R502-391.F

20V, 3.5A P-CHANNEL

ENHANCEMENT MODE FIELD

EFFECT TRANSISTOR



DESCRIPTION

The UTC UT3419 is a P-channel enhancement MOSFET

providing designers with excellent RDS(ON), low gate charge. The

gate voltage is as low as 2.5V.

The UTC UT3419 can be applied in PWM applications or used

as a load switch.



FEATURES

* RDS(ON) < 75mΩ (VGS = -10V)

RDS(ON) < 95mΩ (VGS = -4.5V)

RDS(ON) < 145mΩ (VGS = -2.5V)



SYMBOL



ORDERING INFORMATION

Ordering Number

Package

Pin Assignment

Packing

1

2

3

UT3419G-AE2-R

SOT-23-3

S

G

D

Tape Reel

UT3419G-AE3-R

SOT-23

S

G

D

Tape Reel

Note: Pin Assignment: S: Source

G: Gate

D: Drain



MARKING

34VG

类似零件编号 - UT3419G-AE2-R

制造商	部件名	数据表	功能描述
Unisonic Technologies	UT3419G-AE3-R	145Kb / 3P	20V, 3.5A P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
VBsemi Electronics Co.,...	UT3419G-AE3-R	472Kb / 9P	P-Channel 20-V (D-S) MOSFET

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