UT4101G-AE2-R datasheet(2/4 Pages) UTC

2 / 4 page

UT4101

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R502-164.D



ABSOLUTE MAXIMUM RATINGS (TJ = 25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATING

UNITS

Drain-Source Voltage

VDS

-20

Gate-Source Voltage

VGS

±8.0

Continuous Drain Current (Note 3)

-2.4

Pulsed Drain Current (Note 1, 2)

IDM

-7.5

Power Dissipation

1.25

Junction Temperature

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

RATING

UNIT

Junction-to-Ambient

θJA

100

°C/W



ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS =0 V, ID =-250µA

-20

Drain-Source Leakage Current

IDSS

VDS =-16 V, VGS =0 V

-1.0

µA

Gate-Source Leakage Current

IGSS

VDS =0 V, VGS = ±8.0 V

±100

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS =VGS, ID =-250 µA

-0.40 -0.72

-1.5

Drain-Source On-State Resistance (Note 2)

RDS(ON)

VGS =-4.5 V, ID =-1.6 A

mΩ

VGS =-2.5 V, ID =-1.3 A

120

mΩ

VGS =-1.8 V, ID =-0.9 A

112

210

mΩ

DYNAMIC PARAMETERS

Input Capacitance

CISS

VDS =-10 V, VGS =0V,

f=1MHz

675

Output Capacitance

COSS

100

Reverse Transfer Capacitance

CRSS

SWITCHING PARAMETERS

Turn-ON Delay Time

tD(ON)

VGS=-4.5V,VDS=-10V,RG

=6.0 Ω,

ID =-1.6A

7.5

Turn-ON Rise Time

12.6

Turn-OFF Delay Time

tD(OFF)

30.2

Turn-OFF Fall-Time

21.0

Gate Charge

VDS=-10 V, VGS =-4.5 V, ID

=-1.6A

7.5

8.5

Gate Source Charge

QGS

VDS=-10 V, ID =-1.6A

1.2

Gate Drain Charge

QGD

2.2

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage(Note2)

VSD

VGS=0V, IS=-2.4 A

-0.82

-1.2

Maximum Continuous Drain-Source Diode

Forward Current

-2.4

Reverse Recovery Time

tRR

VGS=0V, dISD/dt=100A/μs,

IS =-1.6A

12.8

Reverse Recovery Charge

QRR

1008

Notes: 1. Pulse width limited by TJ(MAX)

2. Pulse width ≤300us, duty cycle ≤2%.

3. Surface mounted on 1 in

2 copper pad of FR4 board.

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