UTM2054L-AE3-R datasheet(2/3 Pages) UTC

2 / 3 page

UTM2054

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-289.B

ABSOLUTE MAXIMUM RATINGS (TA =25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±16

Drain Current (VGS=10V)

Continuous

Pulsed

IDM

Diode Continuous Forward Current

Power Dissipation

SOT-89

1.47

SOT-23

1.25

Junction Temperature

150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Note: Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS=0V, ID=250µA

Drain-Source Leakage Current

IDSS

VDS=16V, VGS=0V

μA

Gate-Source Leakage Current

IGSS

VDS=0V, VGS=±16V

±100 nA

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250µA

0.6

0.9

1.5

Static Drain-Source On-State Resistance

(Note)

RDS(ON)

VGS=10V, IDS=5A

mΩ

VGS=4.5V, IDS=3.5A

VGS=2.5V, IDS=2.5A

110 130

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

VDS=15V, VGS=0V, f=1.0MHz

450

Output Capacitance

COSS

100

Reverse Transfer Capacitance

CRSS

Gate resistance

VGS=0V, VDS=0V, f=1MHz

2.5

Ω

SWITCHING CHARACTERISTICS

Turn-On Delay Time

tD(ON)

VDD=10V, RL=10Ω, IDS=1A,

VGEN=4.5V, RG=6Ω

Turn-On Rise Time

Turn-Off Delay Time

tD(OFF)

Turn-Off Fall Time

Total Gate Charge

VDS=10V, VGS=4.5V, IDS=5 A

11.5

Gate-Source Charge

QGS

3.8

Gate-Drain Charge

QDD

5.2

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Diode Forward Voltage (Note)

VSD

ISD=3A, VGS=0V

0.7

1.3

Note: Pulse width≦300μs, Duty cycle≦2%

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