UJ0100G-AE3-R datasheet(2/3 Pages) UTC

2 / 3 page

UJ0100

JEET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R203-044.B

ABSOLUTE MAXIMUM RATINGS (TA =25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain to Source Voltage

VDSS

Gate to Source Voltage

VGSS

-30

Gate Current

Drain Current

Power Dissipation

200

Junction Temperature

150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

OFF CHARACTERISTICS

Gate to Drain Breakdown Voltage

BVGDS

IG=-10µA

-30

Drain-Source Leakage Current

IDSS

VDS=10V,VGS=0V

0.6

2.5

Gate-Source Leakage Current

IGSS

VGS=-20V

-1.0

ON CHARACTERISTICS

Gate Cutoff Voltage

VGS(OFF)

VDS=10V, ID=1µA

-1

-4

Drain-Source On-State Resistance

RDS(ON)

VDS=10mV, VGS=0V

250

Ω

Forward Transfer Admittance

|YFS|

VDS=10V, VGS=0V, f =1MHz

2.5

6.0

DYNAMIC PARAMETERS

Input Capacitance

CISS

VDS=10V,VGS=0V,f =1MHz

Reverse Transfer Capacitance

CRSS

1.5

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