2N7002ZG-AE2-R datasheet(1/4 Pages) UTC

部件名	2N7002ZG-AE2-R

功能描述	N-CHANNEL ENHANCEMENT MODE POWER MOSFET

PDF	4 Pages

Scroll/Zoom	100%

制造商	UTC [Unisonic Technologies]

网页	http://www.utc-ic.com

标志

1 / 4 page

UNISONIC TECHNOLOGIES CO., LTD

2N7002Z

Power MOSFET

www.unisonic.com.tw

1 of 4

QW-R502-273.H

300mA, 60V N-CHANNEL

ENHANCEMENT MODE

POWER MOSFET



DESCRIPTION

The UTC 2N7002Z uses advanced technology to provide

excellent RDS(ON), low gate charge and operation with low gate

voltages. This device is suitable for use as a load switch or in

PWM applications.



FEATURES

* RDS(ON) <7.5Ω

* Low Reverse Transfer Capacitance (CRSS = typical 3.0 pF)

* ESD Protected

* Fast Switching Capability

* Avalanche Energy Specified

* Improved dv/dt Capability, High Ruggedness



SYMBOL

2.Gate

1.Source

3.Drain



ORDERING INFORMATION

Ordering Number

Package

Pin Assignment

Packing

1

2

3

2N7002ZG-AE2-R

SOT-23-3

S

G

D

Tape Reel

Note: Pin Assignment: G: Gate D: Drain S: Source



MARKING

CPLG

类似零件编号 - 2N7002ZG-AE2-R

制造商	部件名	数据表	功能描述
Unisonic Technologies	2N7002ZG-AE2-R	169Kb / 4P	300m Amps, 60 Volts N-CHANNEL ENHANCEMENT MODE MOSFET
Unisonic Technologies	2N7002ZG-AE2-R	183Kb / 4P	300mA, 60V N-CHANNEL ENHANCEMENT MODE POWER MOSFET

More results

类似说明 - 2N7002ZG-AE2-R

制造商	部件名	数据表	功能描述
GTM CORPORATION	G2N7002K	368Kb / 4P	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
	G111K	366Kb / 4P	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
	G138	324Kb / 4P	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
	G301K	296Kb / 4P	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
	G2304A	371Kb / 4P	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
	G2308E	330Kb / 4P	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
	GE20N03	296Kb / 5P	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
	GE40N03	251Kb / 5P	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
	GE50L02	258Kb / 5P	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
	GE70N03	299Kb / 5P	N-CHANNEL ENHANCEMENT MODE POWER MOSFET