UT2304

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R502-150.F



PARAMETER

SYMBOL

RATING

UNITS

Drain-Source Voltage

30

V

Gate-Source Voltage

±20

V

Continuous Drain Current (Note 3)

2.5

A

Pulsed Drain Current (Note 1, 2)

10

A

Power Dissipation

1.4

W

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

RATING

UNIT

Junction to Ambient (Note 3)

90

°C/W



PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

30

V

Drain-Source Leakage Current

1

μA

Gate-Source Leakage Current

±100

nA

Breakdown Voltage Temperature Coefficient

0.1

V/°C

ON CHARACTERISTICS

Gate Threshold Voltage

1

3

V

Static Drain-Source On-State Resistance

(Note 2)

117

mΩ

190

mΩ

DYNAMIC CHARACTERISTICS

Input Capacitance

120

190

pF

Output Capacitance

62

pF

Reverse Transfer Capacitance

24

pF

SWITCHING CHARACTERISTICS

Turn-ON Delay Time (Note 2)

5

ns

Turn-ON Rise Time

9

ns

Turn-OFF Delay Time

11

ns

Turn-OFF Fall Time

2

ns

Total Gate Charge (Note 2)

3

5

nC

Gate-Source Charge

0.8

nC

Gate-Drain Charge

1.8

nC

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Forward On Voltage (Note 2)

1.2

V

Reverse Recovery Time (Note 2)

dI/dt=100A/μs

24

ns

Reverse Recovery Charge

23

nC

2. Pulse width ≤300μs, duty cycle ≤2%.

3. Surface mounted on 1 in