UT40N03TG-TQ2-R datasheet(3/5 Pages) UTC

3 / 5 page

UT40N03T

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 5

www.unisonic.com.tw

QW-R502-172.G



ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS =0 V, ID =250µA

Drain-Source Leakage Current

IDSS

VDS=30V,VGS =0V,TJ =25°C

µA

Gate-Source Leakage Current

IGSS

VGS = ±25 V

±100

Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ Reference to 25°C, ID=1mA

0.032

V/°C

ON CHARACTERISTICS

Gate-Threshold Voltage

VGS(TH)

VDS =VGS, ID =250 µA

Drain-Source On-State Resistance

RDS(ON)

VGS =10 V, ID =18 A

mΩ

VGS =4.5 V, ID =14 A

DYNAMIC PARAMETERS

Input Capacitance

CISS

VDS=25V, VGS =0V,

f=1.0MHz

655

Output Capacitance

COSS

145

Reverse Transfer Capacitance

CRSS

SWITCHING PARAMETERS

Turn-ON Delay Time

tD(ON)

VGS=10V,VDS=15V,

RD=0.83Ω, ID =18 A,

RG =3.3 Ω

Turn-ON Rise Time

Turn-OFF Delay Time

tD(OFF)

Turn-OFF Fall-Time

4.4

Total Gate Charge

VDS =20V, VGS =4.5V,

ID =18A

8.8

Gate-Source Charge

QGS

2.5

Gate-Drain Charge

QGD

5.8

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

VSD

IS=28 A, VGS=0V

1.3

Maximum Continuous Drain-Source Diode

Forward Current

VD=VG=0V , VS=1.3V

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

Notes: 1. Pulse width limited by TJ(MAX).

Notes: 2. Pulse width ≤ 300us, duty cycle ≤ 2%.

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