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UT4404G-S08-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 UT4404G-S08-R
功能描述  N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR
PDF  4 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

UT4404G-S08-R 数据表(HTML) 2 Page - Unisonic Technologies

  UT4404G-S08-R Datasheet HTML 1Page - Unisonic Technologies UT4404G-S08-R Datasheet HTML 2Page - Unisonic Technologies UT4404G-S08-R Datasheet HTML 3Page - Unisonic Technologies UT4404G-S08-R Datasheet HTML 4Page - Unisonic Technologies  
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UT4404
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R502-132.E
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±12
V
Continuous Drain Current (Note 2)
TA=25°C
ID
8.5
A
TA=70°C
7.1
A
Pulsed Drain Current (Note 2)
IDM
60
A
Power Dissipation
TA=25°C
PD
2.8
W
TA=70°C
1.8
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction to Ambient
θJA
70
100
°C/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
VGS =0 V, ID =250µA
30
V
Drain-Source Leakage Current
IDSS
VDS =24 V, VGS =0V
0.002
1
µA
Gate-Source Leakage Current
IGSS
VDS =0 V, VGS = ±12V
±100
nA
ON CHARACTERISTICS
Gate-Threshold Voltage
VGS(TH)
VDS =VGS, ID =250µA
0.7
1
1.4
V
On state drain current
ID(ON)
VGS=4.5V, VDS=5V
40
A
Static Drain-Source On-Resistance
RDS(ON)
VGS =10 V, ID =8.5A
18
24
mΩ
VGS =4.5 V, ID =8.5A
22
30
mΩ
VGS = 2.5V, ID =5A
32
48
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS =15 V, VGS =0V, f=1MHz
857
pF
Output Capacitance
COSS
97
pF
Reverse Transfer Capacitance
CRSS
71
pF
Gate resistance
Rg
VGS=0V, VDS=0V, f=1MHz
1.4
Ω
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
VGS=10V,VDS=15V
RL=1.8Ω, RGEN=6Ω
3.2
ns
Turn-ON Rise Time
tR
3.5
ns
Turn-OFF Delay Time
tD(OFF)
21.5
ns
Turn-OFF Fall-Time
tF
2.7
ns
Total Gate Charge
QG
VDS =15V, VGS =4.5V,
ID =8.5A
10
12
nC
Gate-Source Charge
QGS
1.8
nC
Gate-Drain Charge
QGD
3.75
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Diode Forward Voltage
VSD
VGS=0V, IS=1A
0.71
1
V
Maximum Body-Diode Continuous
Current
IS
4.5
A
Body Diode Reverse Recovery Time
tRR
IF=5A, dI/dt =100A/μs
16.8
20
ns
Body Diode Reverse Recovery Charge
QRR
IF=5A, dI/dt =100A/μs
8
12
nC
Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle 0.5% max.
2. Surface mounted on 1 in
2 copper pad of FR4 board



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