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UT4406G-S08-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 UT4406G-S08-R
功能描述  N-CHANNEL ENHANCEMENT MODE POWER MOSFET
PDF  4 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

UT4406G-S08-R 数据表(HTML) 2 Page - Unisonic Technologies

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UT4406
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R502-233.C
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±12
Continuous Drain Current
ID
11.5
A
Pulsed Drain Current
IDM
80
A
Avalanche Current (Note 2)
IAV
25
A
Repetitive Avalanche Energy, L=0.1mH (Note 2)
EAV
78
mJ
Power Dissipation
TC=25°C
PD
3
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction-to-Ambient
θJA
48
65
°C/W
Junction-to-Case
θJC
12
16
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
30
V
Zero Gate Voltage Drain Current
IDSS
VDS=24V, VGS=0V
1
µA
Gate-Body Leakage Current
IGSS
VDS=0V, VGS=±12V
100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
0.8
1
1.5
V
On State Drain Current
ID(ON)
VDS=5V, VGS=4.5V
60
A
Static Drain-Source On-Resistance
RDS(ON)
VGS=10V, ID=12A
11.5
14.8
mΩ
VGS=4.5V, ID=10A
13.5
17.5
VGS=2.5V, ID=8A
19.5
26.8
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=15V, VGS=0V, f=1MHz
1630
pF
Output Capacitance
COSS
201
pF
Reverse Transfer Capacitance
CRSS
142
pF
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
VGS=10V, VDS=15V, RL=1.2Ω,
RG=3Ω
4
ns
Turn-ON Rise Time
tR
5
ns
Turn-OFF Delay Time
tD(OFF)
32
ns
Turn-OFF Fall-Time
tF
5
ns
Total Gate Charge
QG
VDS=15V, VGS=4.5V, ID=11.5A
18
nC
Gate Source Charge
QGS
2.5
nC
Gate Drain Charge
QGD
5.5
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
IS=10A, VGS=0V
0.83
1
V
Maximum Body-Diode Continuous
Current
IS
4.5
A
Body Diode Reverse Recovery Time
tRR
IF=10A, dI/dt=100A/μs
18.7
ns
Body Diode Reverse Recovery
Charge
QRR
IF=10A, dI/dt=100A/μs
19.8
nC



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