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UT4410G-S08-R 数据表(PDF) 1 Page - Unisonic Technologies |
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UT4410G-S08-R 数据表(HTML) 1 Page - Unisonic Technologies |
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1 / 4 page ![]() UNISONIC TECHNOLOGIES CO., LTD UT4410 Power MOSFET www.unisonic.com.tw 1 of 4 Copyright © 2015 Unisonic Technologies Co., Ltd QW-R502-238.B N-CHANNEL 30-V (D-S) MOSFET DESCRIPTION As advanced N-channel logic level enhancement MOSFET, the UT4410 is produced using UTC’s high cell density, DMOS trench technology. which has been specially tailored to minimize the on-resistance and maintain low gate charge for superior switching performance. These devices can be particularly suited for such low voltage applications: cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. FEATURES * RDS(ON) < 18 mΩ @ VGS=10V, ID=10A * RDS(ON) < 20 mΩ @ VGS=4.5V, ID=8A * Ultra low gate charge ( typical 11 nC ) * Low reverse transfer capacitance ( CRSS = typical 35 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL ORDERING INFORMATION Ordering Number Package Pin Assignment Packing 12 3 456 7 8 UT4410G-S08-R SOP-8 S S S G D D D D Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source MARKING |
类似零件编号 - UT4410G-S08-R |
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类似说明 - UT4410G-S08-R |
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