UT5504

Power MOSFET

UNISONICTECHNOLOGIESCO.,Ltd

3 of 5

www.unisonic.com.tw

QW-R502-417.E



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

-40

V

Gate-Source Voltage

±20

V

Continuous Drain Current

-8

A

-6

Pulsed Drain Current

-32

A

Power Dissipation

TO-251/TO-252

41

W

SOP-8

5

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-251/TO-252

75

°C/W

SOP-8

50

Junction to Case

TO-251/TO-252

3

°C/W

SOP-8

25

Notes: 1. Pulse width limited by maximum junction temperature.

2. Duty cycle ≤ 1%



PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

-40

V

Drain-Source Leakage Current

1

µA

10

Gate- Source Leakage Current

±250 nA

On-State Drain Current (Note 1)

-32

A

ON CHARACTERISTICS

Gate Threshold Voltage

-1

-1.5 -2.5

V

Static Drain-Source On-State

Resistance (Note 1)

65

94

mΩ

45

55

Forward Transconductance (Note 1)

11

S

DYNAMIC PARAMETERS

Input Capacitance

1078

pF

Output Capacitance

131

pF

Reverse Transfer Capacitance

100

pF

SWITCHING PARAMETERS

(Note 2)

Total Gate Charge

91

120

nC

Gate to Source Charge

9.6

nC

Gate to Drain Charge

4.7

nC

Turn-ON Delay Time

28

35

ns

Rise Time

40

50

ns

Turn-OFF Delay Time

198 250

ns

Fall-Time

78

120

ns