UT6401

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R502-151.D



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

-30

Gate-Source Voltage

±12

V

Continuous Drain Current (Note 3)

-5

Pulsed Drain Current (Note 2)

-20

A

SOT-23

1.38

Power Dissipation

SOT-26

2

W

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

SOT-23

90

Junction to Ambient (Note 3)

SOT-26

110

°C/W



PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNITS

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

-30

V

Drain-Source Leakage Current

-1

uA

Gate-Source Leakage Current

±100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

-0.7

-1

-1.3

V

On State Drain Current

-25

A

42

49

mΩ

53

64

mΩ

Static Drain-Source On-Resistance (Note 2)

81

119

mΩ

DYNAMIC CHARACTERISTICS

Input Capacitance

943

pF

Output Capacitance

108

pF

Reverse Transfer Capacitance

73

pF

SWITCHING CHARACTERISTICS

Turn-ON Delay Time (Note 2)

6

ns

Turn-ON Rise Time

3

ns

Turn-OFF Delay Time

40

ns

Turn-OFF Fall Time

11

ns

Total Gate Charge (Note 2)

9.5

nC

Gate-Source Charge

2.1

nC

Gate-Drain Charge

2.9

nC

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage(Note2)

-0.75

-1

V

Maximum Continuous Drain-Source Diode

Forward Current

-5

A

MAXIMUN Body-Diode Pulsed Current

-20

A

2. Pulse width ≤300us, duty cycle ≤0.5%.