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UT6402G-AE3-R 数据表(PDF) 4 Page - Unisonic Technologies |
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UT6402G-AE3-R 数据表(HTML) 4 Page - Unisonic Technologies |
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4 / 5 page ![]() UT6402 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 4 of 5 www.unisonic.com.tw QW-R502-152.D TYPICAL CHARACTERISTICS(Cont.) VDS=15V ID=6.9A Capacitance Characteristics Drain to Source Voltage,VDS (V) Gate-Charge Characteristics Gate Charge,QG (nC) 10 8 6 4 2 0 02 4 6 810 12 14 f=1MHZ VGS=0V COSS CRSS CISS 0 5 10 15 20 25 30 0 100 200 300 400 1000 900 800 700 600 500 TJ(Max)=150℃ TA=25℃ 40 30 20 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Single Pulse Power Rating Junction-to-Ambient Drain to Source Voltage,VDS (V) 10μs 100μs 1ms 10ms 0.1s 1s 10s DC RDS(ON) Limited TJ(Max)=150℃ TA=25℃ 100 10 1 0.1 0.1 1 10 100 Maximum Forward Biased Safe Operating Area 10 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Normalized Maximum Transient Thermal Impedance In descending order D=0.5,0.3,0.1,0.05,0.02,0.01,single pulse D=TON/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5℃/W PDM TON T Single Pulse |
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