UT6402

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R502-152.D



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

30

V

Gate-Source Voltage

±20

V

Continuous Drain Current (Note 3)

6.9

A

Pulsed Drain Current (Note 2)

20

A

Power Dissipation

2

W

Junction Temperature

+150

°C

Strong Temperature

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

Junction to Ambient (Note 3)

74

110

°C/W



PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX

UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

30

V

Drain-Source Leakage Current

1

µA

Gate-Source Leakage Current

±100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

1

1.9

3

V

On State Drain Current

20

A

Static Drain-Source On-Resistance

(Note 2)

22.5

28

mΩ

34.5

42

mΩ

DYNAMIC CHARACTERISTICS

Input Capacitance

680

820

pF

Output Capacitance

102

Reverse Transfer Capacitance

77

108

SWITCHING CHARACTERISTICS

Turn-ON Delay Time (Note 2)

4.6

ns

Turn-ON Rise Time

4.1

Turn-OFF Delay Time

20.6

Turn-OFF Fall-Time

5.2

Total Gate Charge (Note 2)

11.5 13.88 16.7

nC

Gate Source Charge

1.82

Gate Drain Charge

3.2

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

0.76

1

V

Maximum Body-Diode Continuous

Current

3

A

Reverse Recovery Time

16.5

20

ns

Reverse Recovery Charge

7.8

nC

2. Pulse width ≤300us, duty cycle ≤0.5%.

3. Surface mounted on 1 in