UT9435H

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R502-131.E



PARAMETER

SYMBOL

RATING

UNITS

Drain-Source Voltage

-30

V

Gate-Source Voltage

±20

V

Continuous Drain Current (Note 3)

±5.3

A

Pulsed Drain Current (Note 1, 2)

±20

A

SOT-23

0.38

Power Dissipation

SOT-26

0.48

W

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

RATING

UNIT

SOT-23

325

Junction to Ambient

SOT-26

260

°C/W



PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX

UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

-30

V

Drain-Source Leakage Current

-1

µA

Gate-Source Leakage Current

±100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

-1

-3

V

44

50

mΩ

Drain-Source On-State Resistance (Note 2)

74

90

mΩ

On State Drain Current

-20

A

DYNAMIC PARAMETERS

Input Capacitance

1040

pF

Output Capacitance

420

pF

Reverse Transfer Capacitance

f=1.0MHz

150

pF

SWITCHING PARAMETERS

Turn-ON Delay Time (Note 2)

19

26

ns

Turn-ON Rise Time

9

13

ns

Turn-OFF Delay Time

74

105

ns

Turn-OFF Fall Time

36

50

ns

Total Gate Charge (Note 2)

22.5

29

nC

Gate-Source Charge

2

nC

Gate-Drain Charge

6

nC

DRAIN-SOURCE DIODE CHARACTERISTICS

Drain-Source Diode Forward Voltage(Note 2)

-0.84 -1.3

V

2. Pulse width ≤ 300us, duty cycle ≤ 2%.

3. Surface mounted on 1 in