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UTD351G-AE3-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 UTD351G-AE3-R
功能描述  N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR
PDF  5 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

UTD351G-AE3-R 数据表(HTML) 2 Page - Unisonic Technologies

  UTD351G-AE3-R Datasheet HTML 1Page - Unisonic Technologies UTD351G-AE3-R Datasheet HTML 2Page - Unisonic Technologies UTD351G-AE3-R Datasheet HTML 3Page - Unisonic Technologies UTD351G-AE3-R Datasheet HTML 4Page - Unisonic Technologies UTD351G-AE3-R Datasheet HTML 5Page - Unisonic Technologies  
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UTD351
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R502-154.C
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
Continuous Drain Current (Note 3)
ID
1.4
A
Pulsed Drain Current
IDM
10
Power Dissipation
PD
0.5
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction-to-Ambient (Note 3)
θJA
250
°C/W
Junction-to-Case
θJC
75
°C/W
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS =0 V, ID =250 µA
30
V
Drain-Source Leakage Current
IDSS
VDS =24 V, VGS =0 V
1
µA
Gate-Source Leakage Current
IGSS
VGS = ±20V, VDS = 0 V
±100
nA
Breakdown Voltage Temperature
Coefficient
∆BVDSS/∆TJ ID=250μA, Referenced to 25°C
26
mV/℃
ON CHARACTERISTICS (Note2)
Gate-Threshold Voltage
VGS(TH)
VDS =VGS, ID =250 µA
0.8
2.1
3
V
Static Drain–Source On–Resistance
RDS(ON)
VGS =10 V, ID =1.4 A
92
160
mΩ
VGS =4.5 V, ID =1.2 A
120
250
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS =15 V, VGS =0V, f=1.0MHz
145
pF
Output Capacitance
COSS
35
Reverse Transfer Capacitance
CRSS
15
SWITCHING PARAMETERS (Note2)
Turn-ON Delay Time
tD(ON)
VDD =15V, ID=1A, VGS =10V,
RGEN =6 Ω
3
6
ns
Turn-ON Rise Time
tR
8
16
Turn-OFF Delay Time
tD(OFF)
16
29
Turn-OFF Fall-Time
tF
2
4
Total Gate Charge
QG
VDS =15 V,VGS =4.5 V,ID =1.4 A
1.3
1.8
nC
Gate-Source Charge
QGS
0.5
Gate-Drain Charge
QGD
0.5
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source
Diode Forward Current
IS
0.42
A
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS = 0.42 A (Note 2)
0.8
1.2
V
Reverse Recovery Time
tRR
IF = 1.4 A, dIF/dt = 100 A/μs
11
ns
Reverse Recovery Charge
QRR
4
nC
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle ≤2%.
3. Surface mounted on 1 in
2 copper pad of FR4 board; 250℃/W when mounted on min.



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