UTM3023L-TN3-R datasheet(2/5 Pages) UTC

2 / 5 page

UTM3023

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R502-178.B



ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±20

Maximum Continuous Drain Current

Maximum Pulsed Drain Current

IDM

Maximum Power Dissipation

62.5

Maximum Junction Temperature

150

°C

Storage Temperature Range

TSTG

-55 ~ +150

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS =0 V, IDS =250µA

Drain-Source Leakage Current

IDSS

VDS =24 V, VGS =0 V

µA

Gate-Source Leakage Current

IGSS

VDS =0 V, VGS = ±20V

±100

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH) VDS =VGS, IDS =250 µA

1.5

Drain-Source On-State Resistance(Note 2)

RDS(ON)

VGS =10 V, IDS =20 A

mΩ

VGS =5 V, IDS =10 A

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

VDS =15 V, VGS =0V, f=1.0MHz

1200

Output Capacitance

COSS

220

Reverse Transfer Capacitance

CRSS

100

SWITCHING CHARACTERISTICS

Turn-ON Delay Time (Note 2)

tD(ON)

IDS=2 A,VDD=15 V,RG=6 Ω,

VGEN =10V

Turn-ON Rise Time

Turn-OFF Delay Time

tD(OFF)

Turn-OFF Fall Time

Total Gate Charge (Note 2)

VDS =15V, VGS =5V, IDS =10A

Gate-Source Charge

QGS

5.8

Gate-Drain Charge

QGD

3.8

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage(Note2)

VSD

ISD=15A,VGS=0V

0.7

1.3

Note: 1. Pulse width limited by TJ(MAX)

2. Pulse width ≤300us, duty cycle ≤2%

3. Surface Mounted on FR4 Board, t ≤ 10 sec.

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