TC1041 datasheet(2/14 Pages) MICROCHIP

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TC1041

DS21346B-page 2

1.0

ELECTRICAL

CHARACTERISTICS

ABSOLUTE MAXIMUM RATINGS*

Supply Voltage ......................................................6.0V

Voltage on Any Pin .......... (VSS – 0.3V) to (VDD +0.3V)

Junction Temperature....................................... +150°C

Operating Temperature Range............. -40°C to +85°C

Storage Temperature Range .............. -55°C to +150°C

*Stresses above those listed under "Absolute Maximum

Ratings" may cause permanent damage to the device. These

are stress ratings only and functional operation of the device

at these or any other conditions above those indicated in the

operation sections of the specifications is not implied.

Exposure to Absolute Maximum Rating conditions for

extended periods may affect device reliability.

TC1041 ELECTRICAL SPECIFICATIONS

Electrical Characteristics: Typical values apply at 25°C and VDD = 3.0V. Minimum and maximum values apply for TA =-40°to

+85°C and VDD = 1.8V to 5.5V, unless otherwise specified.

Symbol

Parameter

Min

Typ

Max

Units

Test Conditions

VDD

Supply Voltage

1.8

—

5.5

Supply Current Operating

—

µAAll Outputs Open

Comparators

VIR

IN+ Voltage Range

VSS –0.2

—

VDD +0.2

VOS

Input Offset Voltage

-5

—+5

VDD =3V, TA =25°C

TA =-40°C to 85°C (Note 1)

Input Bias Current

—

±100

TA =25°C,

IN+=VDD to VSS

VOH

Output High Voltage

VDD –0.3

—

RL =10kΩ to VSS

VOL

Output Low Voltage

—

0.3

RL =10kΩ to VDD

CMRR

Common Mode Rejection Ratio

—

TA =25°C, VDD =5V

VCM =VDD to VSS

PSRR

Power Supply Rejection Ratio

—

TA =25°C

VDD =1.8V to 5V

ISRC

Output Source Current

—

IN+ = VDD,

Output ShortedtoVSS

VDD =1.8V

ISINK

Output Sink Current

—

IN+ = VSS,

Output ShortedtoVDD

VDD =1.8V

VHYST

Voltage Range at HYST Pin

VREF –0.08

—

VREF

IHYST

Hysteresis Input Current

—

±100

tPD1

Response Time

—

µsec

100mV Overdrive, CL = 100pF

tPD2

Response Time

—

µsec

10mV Overdrive, CL = 100pF

Voltage Reference

VREF

Reference Voltage

1.176

1.200

1.224

IREF(SOURCE) Source Current

—

µA

IREF(SINK)

Sink Current

—

µA

CL(REF)

Load Capacitance

—

100

EVREF

Noise Voltage

—

µVRMS 100Hz to 100kHz

eVREF

Noise Voltage Density

—

1.0

—

µV/√Hz 1kHz

Note

VOS is measured as (VUT +VLT –2VREF)/2 where VUT is the upper hysteresis threshold and VLT is the lower hysteresis threshold with

VREF –VHYST set to 10mV. This represents the assymetry of the hysteresis thresholds around VREF.

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