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UT2305AG-AE3-R 数据表(PDF) 3 Page - Unisonic Technologies

部件名 UT2305AG-AE3-R
功能描述  P-CHANNEL ENHANCEMENT MOSFET
PDF  5 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

UT2305AG-AE3-R 数据表(HTML) 3 Page - Unisonic Technologies

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UT2305A
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 5
www.unisonic.com.tw
QW-R502-192.E
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
UNIT
Drain-Source Voltage
VDSS
- 30
V
Gate-Source Voltage
VGSS
± 12
V
Continuous Drain Current (Note 3) (TA=25°C)
ID
-4.2
A
Pulsed Drain Current (Note 1, 2)
IDM
-10
A
SOT-23
1.38
W
Total Power Dissipation (TA=25°C)
DFN-6B(2×2)
PD
1.48
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATING
UNIT
SOT-23
90
°C/W
Junction to Ambient (Note 3)
DFN-6B(2×2)
θJA
86
°C/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=-250μA
-30
V
Drain-Source Leakage Current
IDSS
VDS=-30V, VGS=0V
-1
μA
Gate-Source Leakage Current
IGSS
VGS=±12V, VDS=0V
±100
nA
Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ Reference to 25°C, ID=-1mA
-0.1
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=-250μA
-0.5
-1.2
V
VGS=-10V, ID=-3.2A
60
mΩ
VGS=-4.5V, ID=-3.0A
80
mΩ
VGS=-2.5V, ID=-2.0A
150
mΩ
Drain-Source On-State Resistance (Note 2)
RDS(ON)
VGS=-1.8V, ID=-1.0A
250
mΩ
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
740
pF
Output Capacitance
COSS
167
pF
Reverse Transfer Capacitance
CRSS
VGS=0V, VDS=-15V, f=1MHz
126
pF
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note 2)
tD(ON)
5.9
ns
Turn-ON Rise Time
tR
3.6
ns
Turn-OFF Delay Time
tD(OFF)
32.4
ns
Turn-OFF Fall Time
tF
VDS=-15V, VGS=-10V,
ID=-4.2A, RG=6Ω, RD=3.6Ω
2.6
ns
Total Gate Charge (Note 2)
QG
10.6
nC
Gate-Source Charge
QGS
2.32
nC
Gate-Drain Charge
QGD
VDS=-16V, VGS=-4.5V,
ID=-4.2A
3.68
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note2)
VSD
VGS=0V, IS=-1.2A
-1.2
V
Reverse Recovery Time
tRR
27.7
ns
Reverse Recovery Charge
QRR
VGS=0V, IS=-4.2A,
dI/dt=100A/μs
22
nC
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤ 300μs, duty cycle ≤ 2%.
3. Surface mounted on 1 in
2 copper pad of FR4 board.



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