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TC1267VET 数据表(PDF) 2 Page - Microchip Technology

部件名 TC1267VET
功能描述  400mA PCI LDO
PDF  14 Pages
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制造商  MICROCHIP [Microchip Technology]
网页  http://www.microchip.com
标志 MICROCHIP - Microchip Technology

TC1267VET 数据表(HTML) 2 Page - Microchip Technology

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TC1267
DS21378B-page 2
© 2002 Microchip Technology Inc.
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings*
Input Supply Voltage (VIN)..............-0.5V to +7V (Max)
Auxiliary Supply Voltage (VAUX) .....-0.5V to +7V (Max)
LDO Output Current (IOUT)................................400mA
Thermal Impedance,
Junction-to-Ambient (
θJA).......... 27°C/W for DDPAK
ESD Rating .......................................................... 2 KV
Operating Temperature Range (TA)........-5°C to +70°C
Storage Temperature Range (TSTG) ...-65°C to +150°C
*Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
TC1267 ELECTRICAL SPECIFICATIONS
Electrical Characteristics: TA = +25°C, VIN =5V, VAUX =3.3V, IOUT =0.1mA,COUT =4.7µF, unless otherwise noted. Boldface
type specifications apply over full operating range.
Symbol
Parameter
Min
Typ
Max
Units
Test Conditions
VIN
Supply Voltage
4.4
5.0
5.5
VVAUX =0V
IGND
Ground Current
230
260
450
500
µAVAUX =0V (Note 6)
VAUX =3.3V (Note 6)
IVIN
Reverse Leakage from
VAUX
—-0.1
-1.0
µAV
AUX =3.5V, VIN =0V, IOUT =0mA
VAUX
Supply Voltage
3.0
3.3
3.6
V
IQ(AUX)
Quiescent Current
50
70
100
µAVIN =0V, IOUT =0mA
60
80
120
µAVIN =5V, IOUT =0mA
IVAUX
Reverse Leakage from VIN
—-0.1
-1.0
µAV
IN =5.5V, VAUX =0V, IOUT =0mA
VTH(LO)
5V Detector
Low Threshold Voltage
3.75
3.90
4.05
VVIN Falling (Notes 2, 3)
VHYST
5V Detector
Hysteresis Voltage
200
260
300
mV
(Notes 2, 3)
VTH(HI)
5V Detector
High Threshold Voltage
4.0
4.15
4.30
VVIN Rising (Notes 2, 3)
VOUT
LDO Output Voltage
3.300
V
IOUT =20mA
3.201
3.366
V4.4V
≤ V
IN ≤ 5.5V, 0mA ≤ IOUT ≤ 400mA
3.000
——
V
0mA
≤ I
OUT ≤ 400mA (Note 4)
IOUT
Output Current
400
mA
REG(LINE)
Line Regulation
-0.5
0.05
+0.5
%VIN = 4.3V to 5.5V
REG(LOAD)
Load Regulation
-1.5
-0.1
+0.5
%IOUT = 0.1mA to 400mA
VDR
Drive Voltage
VIN -0.2
VIN -0.3
VIN -0.1
V4.3V
≤ VIN ≤ 5.5V, IDR =200µA
35
150
200
mV
VIN <VTH(LO),IDR =200µA
Note
1:
Ensured by design.
2:
See 5V Detect Thresholds, Figure 4-1.
3:
Recommended source impedance for 5V supply:
≤ 0.25Ω. This will ensure that IOUT xRSOURCE <VHYST, thus avoiding DR toggling during
5V detect threshold transitions.
4:
In Application Circuit, Figure 3-1.
5:
See Timing Diagram, Figure 4-2.
6:
Ground Current is independent of ILOAD.



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