MMBT8050 datasheet(1/2 Pages) KINGTRONICS

部件名	MMBT8050

功能描述	For switching and amplifier applications

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制造商	KINGTRONICS [Kingtronics International Company]

网页	http://www.kingtronics.com

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For switching and amplifier applications

As complementary types the PNP transistors

MMBT8550 is recommended.

Absolute Maximum Ratings (Ta = 25℃)

PARAMETER

SYMBOL

VALUE

UNIT

Collector Base Voltage

VCBO

40

V

Collector Emitter Voltage

VCEO

25

V

Emitter Base Voltage

VEBO

6

V

Collector Current

IC

600

mA

Power Dissipation

Ptot

350

mW

Junction Temperature

Tj

150

℃

Storage Temperature Range

Ts

- 55 to + 150

℃

Characteristics at Ta = 25℃

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

DC Current Gain

atVCE =1 V,IC = 100 mA

MMBT8050C

MMBT8050D

atVCE =1 V,IC = 500 mA

hFE

100

160

40

-

250

400

-

Collector Base Cutoff Current

atVCB = 35V

ICBO

-

100

nA

Collector Base Breakdown Voltage

atIC = 10 µA

V(BR)CBO

40

-

V

Collector Emitter Breakdown Voltage

atIC = 2 mA

V(BR)CEO

25

-

V

Emitter Base Breakdown Voltage

atIE = 100 µA

V(BR)EBO

6

-

V

Collector Emitter Saturation Voltage

atIC =500mA,IB = 50 mA

VCE(sat)

-

0.5

V

Base Emitter Saturation Voltage

atIC =500mA,IB = 50 mA

VBE(sat)

-

1.2

V

Gain Bandwidth Product

atVCE =5 V,IC = 10 mA

fT

-

100

-

MHz

1.Base

2.Emitter

3.Collector

SOT-23 Plastic Package

Website: www.kingtronics.com

Email: info@kingtronics.com

Tel: (852) 8106 7033

Fax: (852) 8106 7099

MMBT8050

NPN Silicon Epitaxial Planar

Transistors

类似零件编号 - MMBT8050

制造商	部件名	数据表	功能描述
SEMTECH ELECTRONICS LTD...	MMBT8050	145Kb / 2P	NPN Silicon Epitaxial Planar Transistor
Nanjing International G...	MMBT8050	62Kb / 2P	NPN Silicon Epitaxial Planar Transistor
ARTSCHIP ELECTRONICS CO...	MMBT8050	1Mb / 4P	LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR
Bytesonic Electronics C...	MMBT8050	485Kb / 3P	TRANSISTOR(NPN) 2016/6/27
Dongguan Pingjingsemi T...	MMBT8050	639Kb / 3P	NPN Transistor

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