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TC4626EOE 数据表(PDF) 2 Page - Microchip Technology

部件名 TC4626EOE
功能描述  Power CMOS Drivers With Voltage Tripler
PDF  14 Pages
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制造商  MICROCHIP [Microchip Technology]
网页  http://www.microchip.com
标志 MICROCHIP - Microchip Technology

TC4626EOE 数据表(HTML) 2 Page - Microchip Technology

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TC4626/TC4627
DS21426B-page 2
© 2002 Microchip Technology Inc.
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings*
Supply Voltage ......................................................6.2V
Input Voltage, Any Terminal
..................................... VS +0.3V toGND –0.3V
Package Power Dissipation (TA ≤ 70°C)
PDIP .........................................................730mW
CERDIP....................................................800mW
SOIC ........................................................760mW
Derating Factor
PDIP .......5.6 mW/°C Above 36°C
CERDIP................................................6.0mW/°C
Operating Temperature Range (Ambient)
C Version......................................... 0°C to +70°C
E Version ...................................... -40°C to +85°C
M Version ................................... -55°C to +125°C
Storage Temperature Range .............. -65°C to +150°C
*Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
TC4626/TC4627 ELECTRICAL SPECIFICATIONS
Electrical Characteristics: TA =+25°C,VDD =5V, C1 =C2 =C3 10µF unless otherwise noted.
Symbol
Parameter
Min
Typ
Max
Units
Test Conditions
Input
VIH
Logic 1, High Input Voltage
2.4
—
—
V
VIL
Logic 0, Low Input Voltage
—
—
0.8
V
IIN
Input Current
-1
—
1
µA0V ≤ VIN ≤ VDRIVE
Output
VOH
High Output Voltage
VBOOST –0.025
—
—
V
VOL
Low Output Voltage
—
—
0.025
V
RO
Output Resistance, High
—
10
15
Ω
IOUT =10mA, VDD =5V
RO
Output Resistance, Low
—
8
10
Ω
IOUT =10mA, VDD =5V
IPK
Peak Output Current
—
1.5
—
A
Switching Time
tR
Rise Time
—
33
40
nsec
Figure3-1, Figure3-2
tF
Fall Time
—
27
35
nsec
Figure 3-1, Figure 3-2
tD1
Delay Time
—
35
45
nsec
Figure 3-1, Figure 3-2
tD2
Delay Time
—
45
55
nsec
Figure 3-1, Figure 3-2
FMAX
Maximum Switching Frequency
1.0
—
—
MHz
VDD =5V, VBOOST >8.5V,
Figure 3-1
Voltage Booster
R3
Voltage Tripler Output
Source Resistance
—300
400
Ω
IL =10mA, VDD =5V
R2
Voltage Doubler Output
Source Resistance
—120
200
Ω
FOSC
Oscillator Frequency
12
—
28
kHz
VOSC
Oscillator Amplitude Measured
at C1-
4.5
—
10
V
RLOAD =10kΩ
UV @VBOOST
Undervoltage Threshold
7.0
7.8
8.5
V
VSTART @VBOOST
Start Up Voltage
10.5
11.3
12
V
VBOOST
@VDD = 5V
14.6
—
—
V
No Load



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