3N40

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-553.d

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PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

400

V

Gate-Source Voltage

±30

V

Drain Current

3

A

Pulsed (Note 2)

12

A

Avalanche Energy

Single Pulsed (Note 3)

290

mJ

Repetitive (Note 2)

3

mJ

Power Dissipation

TO-220F

25

W

TO-252/TO-252D

50

W

Derate above 25°C

TO-220F

0.2

W/°C

TO-252/TO-252D

0.4

W/°C

Junction Temperature

+150

°C

Storage Temperature

-55~+150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-220F

62.5

°C/W

TO-252/TO-252D

110

Junction to Case

TO-220F

4.9

°C/W

TO-252/TO-252D

2.5