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7N10G-TND-R 数据表(PDF) 4 Page - Unisonic Technologies

部件名 7N10G-TND-R
功能描述  N-CHANNEL POWER MOSFET
PDF  7 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

7N10G-TND-R 数据表(HTML) 4 Page - Unisonic Technologies

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7N10
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
4 of 7
www.unisonic.com.tw
QW-R502-394.J
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS =0V, ID =250µA
100
V
Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ Reference to 25°C, ID =250µA
0.1
V/°C
Drain-Source Leakage Current
IDSS
VDS =100V, VGS =0V
1
µA
VDS =80V, TC =125°C
10
µA
Gate-Source Leakage Current
IGSS
VGS =±25V, VDS =0V
±100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID =250µA
2.0
4.0
V
Static Drain-Source On-Resistance
RDS(ON)
VGS =10V, ID =3.5A
0.144 0.35
Ω
Forward Transconductance
gFS
VDS =40V, ID =0.85A (Note 1)
1.85
S
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS =25V, VGS=0V, f=1.0MHz
380
450
pF
Output Capacitance
COSS
70
85
pF
Reverse Transfer Capacitance
CRSS
11
15
pF
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=10V, VDS=50V, ID=1.3A
(Note 1,2)
14.3
nC
Gate Source Charge
QGS
4.2
nC
Gate Drain Charge
QGD
3.2
nC
Turn-ON Delay Time
tD(ON)
VDD=30V, ID=0.5A, RG=25Ω
(Note 1,2)
30
38
ns
Turn-ON Rise Time
tR
40
50
ns
Turn-OFF Delay Time
tD(OFF)
80
90
ns
Turn-OFF Fall-Time
tF
35
40
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
Forward Current
IS
7
A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
16
A
Drain-Source Diode Forward Voltage
VSD
IS =7A, VGS =0V
1.5
V
Reverse Recovery Time
trr
VGS=0V, IS=7.3A,
diF/dt=100A/µs
70
ns
Reverse Recovery Charge
QRR
150
nC
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature



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