7N10

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 7

www.unisonic.com.tw

QW-R502-394.J



PARAMETER

SYMBOL

RATINGS

UNIT

Drain -Source Voltage

100

V

Gate-Source Voltage

±25

V

Continuous Drain Current

7

A

6.8

A

Pulsed Drain Current (Note 2)

16

A

Avalanche Current (Note 2)

7

A

Repetitive Avalanche Energy (Note 2)

0.2

mJ

Single Pulsed Avalanche Energy (Note 3)

50

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

6.0

V/ns

Power Dissipation

SOT-223

2.0

W

TO-251/TO-252

TO-252D

2.5

Derate above 25°C

SOT-223

0.016

W/°C

TO-251/TO-252

TO-252D

0.02

Operating Junction Temperature

-55 ~ +150

°C

Storage Temperature

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by maximum junction temperature



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

SOT-223

62.5

°C/W

TO-251/TO-252

TO-252D

50

Junction to Case

SOT-223

12

°C/W

TO-251/TO-252

TO-252D

7.5

Note: When mounted on the minimum pad size recommended (PCB Mount)