UD606G-TN5-R datasheet(5/11 Pages) UTC

5 / 11 page

UD606

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

5 of 11

www.unisonic.com.tw

QW-R502-169.C



ELECTRICAL CHARACTERISTICS(Cont.)

P-CHANNEL

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS=0V, ID=-250uA

-40

Drain-Source Leakage Current

IDSS

VDS=-32V, VGS=0V

-1

Gate-Source Leakage Current

IGSS

VDS=0V, VGS=±20V

±100

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=-250uA

-1

-1.8

-3

Drain-Source On-State Resistance (Note2)

RDS(ON)

VGS=-10V, ID=-8A

mΩ

VGS=-4.5V, ID=-4A

mΩ

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

VGS=0V,VDS=-20V,f=1.0MHz

657

Output Capacitance

COSS

143

Reverse Transfer Capacitance

CRSS

SWITCHING CHARACTERISTICS

Turn-ON Delay Time (Note2)

tD(ON)

VDS=-20V, VGS=-10V,

RG=3Ω, RL=2.5Ω

Turn-ON Rise Time

12.2

Turn-OFF Delay Time

tD(OFF)

Turn-OFF Fall Time

12.5

Total Gate Charge (Note2)

VDS=-20V, VGS=-10V, ID=-8A

14.1

Gate-Source Charge

QGS

2.2

Gate-Drain Charge

QGD

4.1

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage(Note2)

VSD

IS=-1A, VGS=0V

-0.75

-1

Diode Continuous Forward Current

-8

Reverse Recovery Time

tRR

IF=-8A, dI/dt=100A/μs

23.2

Reverse Recovery Charge

QRR

18.2

Notes: 1. Pulse width limited by TJ(MAX)

2. Pulse width ≤300us, duty cycle ≤0.5%.

3. Surface Mounted on 1in

2 pad area, t≤10sec.

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