UD4614G-TN4-R datasheet(4/10 Pages) UTC

4 / 10 page

UD4614

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

4 of 10

www.unisonic.com.tw

QW-R502-147.G



ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)

N-CHANNEL

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS=0V, ID=10mA

Drain-Source Leakage Current

IDSS

VDS=32V, VGS=0V

Gate-Source Leakage Current

IGSS

VDS=0V, VGS=±20V

±100

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250uA

2.3

VGS=10V, ID=6A

23.2

mΩ

Drain-Source On-State Resistance (Note2)

RDS(ON)

VGS=4.5V, ID=5A

32.6

mΩ

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

780

Output Capacitance

COSS

110

Reverse Transfer Capacitance

CRSS

VGS=0V,VDS=20V,f=1.0MHz

SWITCHING CHARACTERISTICS

Turn-ON Delay Time (Note2)

tD(ON)

Turn-ON Rise Time

Turn-OFF Delay Time

tD(OFF)

172

Turn-OFF Fall Time

VDS=20V, VGS=10V,

RG=3Ω, ID=1A

Total Gate Charge (Note2)

Gate-Source Charge

QGS

6.3

Gate-Drain Charge

QGD

VDS=20V, VGS=10V, ID=6A

6.3

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage(Note2)

VSD

IS=1A, VGS=0V

0.77

Diode Continuous Forward Current

Reverse Recovery Time

tRR

20.5

Reverse Recovery Charge

QRR

IDS=6A, dI/dt=100A/μs

14.5

UD4614G-TN4-R 数据表(PDF) 4 Page - Unisonic Technologies

UD4614G-TN4-R 数据表(HTML) 4 Page - Unisonic Technologies

Html Pages

1 2 3 4 5 6 7 8 9 10

数据表下载