UD4606

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 9

www.unisonic.com.tw

QW-R502-144.D



N-CHANNEL

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

30

V

Gate-Source Voltage

±20

V

Continuous Drain Current (Note2)

6.9

A

Pulsed Drain Current (Note2)

30

A

Power Dissipation

DIP-8

2.5

W

SOP-8

2

W

Junction Temperature

+150

°С

Storage Temperature

-55 ~ +150

°С

P-CHANNEL

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

-30

V

Gate-Source Voltage

±20

V

Continuous Drain Current (Note 2)

-6

A

Pulsed Drain Current (Note 2)

-30

A

Power Dissipation

DIP-8

2.5

W

SOP-8

2

W

Junction Temperature

+150

°С

Storage Temperature

-55 ~ +150

°С

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Surface Mounted on 1in



THERMAL DATA

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

Junction to Ambient (Note)

DIP-8

74

110

°С/W

SOP-8

67

80

°С/W

Note: Surface Mounted on 1in



N-CHANNEL

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

30

V

Drain-Source Leakage Current

1

uA

Gate-Source Leakage Current

100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

1

1.9

3

V

Drain-Source On-State Resistance

22.5

28

mΩ

34.5

42

mΩ

DYNAMIC CHARACTERISTICS

Input Capacitance

680

pF

Output Capacitance

102

pF

Reverse Transfer Capacitance

77

pF

SWITCHING CHARACTERISTICS

Turn-ON Delay Time (Note2)

4.6

ns

Turn-ON Rise Time

4.1

ns

Turn-OFF Delay Time

20.6

ns

Turn-OFF Fall Time

5.2

ns