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19N10G-TQ2-R 数据表(PDF) 4 Page - Unisonic Technologies

部件名 19N10G-TQ2-R
功能描述  N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE
PDF  8 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

19N10G-TQ2-R 数据表(HTML) 4 Page - Unisonic Technologies

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19N10
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
4 of 8
www.unisonic.com.tw
QW-R502-261.J
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
100
V
Breakdown Voltage Temperature
Coefficient
∆BVDSS/∆TJ
ID=250µA,
Referenced to 25°C
0.1
V/°C
VDS=100V, VGS=0V
1
µA
Drain-Source Leakage Current
IDSS
VDS=100V, TJ=125°C
10
µA
Forward
VGS=25V, VDS=0V
100
Gate-Source Leakage Current
Reverse
IGSS
VGS=-25V, VDS=0V
-100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
2.0
4.0
V
Static Drain-Source On-Resistance
RDS(ON)
VGS=10V, ID=7.8A
0.078
0.1
Ω
Forward Transconductance
gFS
VDS=40V, ID=7.8A (Note 1)
11
S
DYNAMIC PARAMETERS
Input Capacitance
CISS
600
780
pF
Output Capacitance
COSS
165
215
pF
Reverse Transfer Capacitance
CRSS
VDS=25V, VGS=0V, f=1.0MHz
32
40
pF
SWITCHING PARAMETERS
Total Gate Charge
QG
19
25
nC
Gate Source Charge
QGS
6
nC
Gate Drain Charge
QGD
VDS=50V, ID=1.3A, VGS=10V
(Note 1, 2)
6
nC
Turn-ON Delay Time
tD(ON)
45
60
ns
Turn-ON Rise Time
tR
70
90
ns
Turn-OFF Delay Time
tD(OFF)
165
250
ns
Turn-OFF Fall-Time
tF
VDD=30V, ID=0.5A, RG=25Ω
(Note 1, 2)
78
90
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
VGS=0V, IS=15.6A
1.5
V
Maximum Body-Diode Continuous Current
IS
15.6
A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
62.4
A
Body Diode Reverse Recovery Time
tRR
78
ns
Body Diode Reverse Recovery Charge
QRR
VGS= 0V, IS=19A,
dIF/dt=100A/μs (Note 1)
200
nC
Note: 1. Pulse Test : Pulse width ≤300µs, Duty cycle≤ 2%
Note: 2. Essentially independent of operating temperature



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