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UF630G-S08-R 数据表(PDF) 3 Page - Unisonic Technologies |
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UF630G-S08-R 数据表(HTML) 3 Page - Unisonic Technologies |
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3 / 8 page ![]() UF630 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 8 www.unisonic.com.tw QW-R502-049.J ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 200 V Drain-Gate Voltage (RGS = 20kΩ, TJ =25°C ~125°C) VDGR 200 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current ID 9 A Pulsed Drain Current (Note 2) IDM 36 A Single Pulse Avalanche Energy (Note 3) EAS 150 mJ TO-220/TO-262 73 TO-220F1/ TO-220F 38 TO-220F2 42 TO-251/ TO-252 46 Power Dissipation SOP-8 PD 5 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ. 3. L = 4mH, IAS = 8.3A, VDD = 20V, RG = 25 Ω, Starting TJ = 25°C THERMAL DATA PARAMETER SYMBOL RATING UNIT TO-220/TO-262 TO-220F1/ TO-220F TO-220F2 62.5 TO-251/ TO-252 100.3 Junction to Ambient SOP-8 θJA 83 °C/W TO-220/TO-262 1.71 TO-220F1/ TO-220F 3.31 TO-220F2 2.98 TO-251/ TO-252 2.7 Junction to Case SOP-8 θJC 24 °C/W |
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