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UF640G-T2Q-R 数据表(PDF) 6 Page - Unisonic Technologies

部件名 UF640G-T2Q-R
功能描述  N-CHANNEL POWER MOSFET
PDF  6 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

UF640G-T2Q-R 数据表(HTML) 6 Page - Unisonic Technologies

  UF640G-T2Q-R Datasheet HTML 1Page - Unisonic Technologies UF640G-T2Q-R Datasheet HTML 2Page - Unisonic Technologies UF640G-T2Q-R Datasheet HTML 3Page - Unisonic Technologies UF640G-T2Q-R Datasheet HTML 4Page - Unisonic Technologies UF640G-T2Q-R Datasheet HTML 5Page - Unisonic Technologies UF640G-T2Q-R Datasheet HTML 6Page - Unisonic Technologies  
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UF640
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
6 of 6
www.unisonic.com.tw
QW-R502-066.I
TYPICAL CHARACTERISTICS
0
1.0
2.0
5.0
0
6
12
18
24
30
Saturation Characteristics
Drain to Source Voltage, VDS (V)
3.0
4.0
Pulse Duration = 80µs
Duty Cycle = 0.5% MAX
VGS=6V
015
30
75
0
0.3
0.6
0.8
1.2
1.5
Drain to Source On Resistance vs. Gate
Voltage And Drain Current
Drain Current, ID (A)
45
60
VGS=10V
Pulse Duration = 80µs
Duty Cycle = 0.5% Max
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.



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