UF1010EL-TQ2-R datasheet(3/5 Pages) UTC

3 / 5 page

UF1010E

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 5

www.unisonic.com.tw

QW-R502-306.D



ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS=0 V, ID=250 μA

Drain-Source Leakage Current

IDSS

VDS=60 V,VGS=0 V

μA

VDS=48 V,VGS=0 V,TJ=150°C

250

μA

Gate-Source Leakage Current

IGSS

VGS=±20 V, VDS=0 V

±100

Breakdown Voltage Temperature Coefficient △BVDSS/△TJ Reference to 25°C, ID=1mA

0.064

V/°C

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250 μA

2.0

4.0

Static Drain-Source On Resistance(Note)

RDS(ON)

VGS=10 V, ID=50 A

mΩ

DYNAMIC PARAMETERS

Input Capacitance

CISS

VDS=25 V, VGS=0 V,f=1MHz

3210

Output Capacitance

COSS

690

Reverse Transfer Capacitance

CRSS

140

SWITCHING PARAMETERS

Total Gate Charge

ID =50A,VDS =48V,VGS =10V

130

Gate-to-Source Charge

QGS

Gate-to-Drain ("Miller") Charge

QGD

Turn ON Delay Time

tD(ON)

VDD =30V,ID =50A,RG =3.6Ω

VGS = 10V

Turn ON Rise Time

Turn OFF Delay Time

tD(OFF)

Turn OFF Fall Time

Internal Drain Inductance

4.5

Internal Source Inductance

7.5

Diode Forward Voltage

VSD

TJ = 25°C, IS = 50A,VGS = 0V

1.3

Maximum Continuous Drain-Source Diode

Forward Current

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

330

Reverse Recovery Time

trr

TJ=25°C,IF=50A,

di/dt=100A/μs

110

Reverse Recovery Charge

QRR

220

330

Note: Pulse width ≤ 400μs; duty cycle ≤ 2%.

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