UP2790G-S08-R datasheet(3/6 Pages) UTC

3 / 6 page

UP2790

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R502-339.C



ABSOLUTE MAXIMUM RATINGS (TA =25°C, unless otherwise specified)

N-Channel

PARAMETER

SYMBOL

RATINGS

UNIT

Drain to Source Voltage (VGS=0V)

VDSS

Gate to Source Voltage (VDS=0V)

VGSS

±20

Continuous Drain Current

Pulsed Drain Current (Note 2)

IDM

Single Avalanche Current (Note 3)

IAS

Single Avalanche Energy (Note 3)

EAS

3.6

Power Dissipation (Note 4)

1.7

Junction Temperature

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

P-Channel

PARAMETER

SYMBOL

RATINGS

UNIT

Drain to Source Voltage (VGS=0V)

VDSS

-30

Gate to Source Voltage (VDS=0V)

VGSS

±20

Drain Current (DC)

-6

Pulsed Drain Current (Note 2)

IDM

-24

Single Avalanche Current (Note 3)

IAS

-6

Single Avalanche Energy (Note 3)

EAS

3.6

Power Dissipation (Note 4)

1.7

Junction Temperature

150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. PW≤10 μs, Duty Cycle≤1%

3. Mounted on ceramic substrate of 2000 mm

2 x 1.6 mm

4. L = 0.1mH, VDD =

x VDSS, RG = 25 Ω, Starting TJ = 25°C

UP2790G-S08-R 数据表(PDF) 3 Page - Unisonic Technologies

UP2790G-S08-R 数据表(HTML) 3 Page - Unisonic Technologies

Html Pages

1 2 3 4 5 6

数据表下载