UF1010E

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R502-306.D

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PARAMETER

SYMBOL

RATINGS

UNIT

Gate to Source Voltage

±20

V

Drain Current

84

A

Pulsed (Note 2)

330

Avalanche Current (Note 2)

50

A

Avalanche Energy

Repetitive (Note 2)

17

mJ

Single Pulsed (Note3)

1180

mJ

Power Dissipation

TO-220/TO-263

200

W

TO-220F1/ TO-220F2

54

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note: 1.

2.

3.

Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-220/TO-263

62

°C/W

TO-220F1/ TO-220F2

62.5

Junction to Case

TO-220/TO-263

0.75

°C/W

TO-220F1/ TO-220F2

2.3