1N60A

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 7

www.unisonic.com.tw

QW-R502-091.K

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PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

600

V

Gate-Source Voltage

±30

V

Continuous Drain Current

0.5

A

Pulsed Drain Current (Note 2)

2

A

Avalanche Energy

Single Pulse(Note 3)

50

mJ

Repetitive(Note 2)

3.6

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

SOT-223

6.25

W

TO-251/TO-252

34

TO-92

3

Derate above 25°C

SOT-223

0.05

W/°C

TO-251/TO-252

0.27

TO-92

0.025

Junction Temperature

+150

°C

Operating Temperature

-55 ~ +150

°C

Storage Temperature

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

SOT-223

150

°C/W

TO-251/TO-252

110

TO-92

160

Junction to Case

SOT-223

20

°C/W

TO-251/TO-252

5

TO-92

80