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1N65AG-AA3-R 数据表(PDF) 7 Page - Unisonic Technologies

部件名 1N65AG-AA3-R
功能描述  N-CHANNEL POWER MOSFET
PDF  9 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

1N65AG-AA3-R 数据表(HTML) 7 Page - Unisonic Technologies

  1N65AG-AA3-R Datasheet HTML 1Page - Unisonic Technologies 1N65AG-AA3-R Datasheet HTML 2Page - Unisonic Technologies 1N65AG-AA3-R Datasheet HTML 3Page - Unisonic Technologies 1N65AG-AA3-R Datasheet HTML 4Page - Unisonic Technologies 1N65AG-AA3-R Datasheet HTML 5Page - Unisonic Technologies 1N65AG-AA3-R Datasheet HTML 6Page - Unisonic Technologies 1N65AG-AA3-R Datasheet HTML 7Page - Unisonic Technologies 1N65AG-AA3-R Datasheet HTML 8Page - Unisonic Technologies 1N65AG-AA3-R Datasheet HTML 9Page - Unisonic Technologies  
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1N65A
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
7 of 9
www.unisonic.com.tw
QW-R502-584.C
TYPICAL CHARACTERISTICS
100
101
100
Drain-Source Voltage, VDS (V)
Output Characteristics
250μs Pulse Test
TC=25°C
10-1
VGS
Top: 15.0V
10.0V
8.0V
7.0V
6.0V
5.5V
5V
Bottorm:4.5V
100
10-1
2
Gate-Source Voltage, VGS (V)
Transfer Characteristics
46
8
10
VDS=50V
250μs Pulse Test
4.5V
0
0.0
Drain Current, ID (A)
0.5
1.0
2.5
VGS=10V
TJ=25°C
VGS=20V
1.5
2.0
5
10
15
25
30
On-Resistance vs. Drain Current
20
100
10-1
0.2
Source-Drain Voltage, VSD (V)
Source- Drain Diode Forward Voltage
1.6
0.4
0.6
0.8
1.0
1.2
1.4
VGS=0V
250μs Pulse Test
200
0
10-1
Drain-SourceVoltage, VDS (V)
Capacitance vs. Drain-Source Voltage
150
50
100
100
101
VGS=0V
f = 1MHz
CISS=CGS+CGD
(CDS=shorted)
COSS=CDS+CGD
CRSS=CGD
CRSS
CISS
COSS
0
Total Gate Charge, QG (nC)
2
4
10
ID=1.0A
6
8
8
10
12
Gate Charge vs. Gate-Source Voltage
6
4
2
0
VDS=520V
VDS=300V
VDS=120V



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