2N7002LL

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-284.e



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

60

V

60

V

Gate-Source Voltage

Continuous

±20

V

±40

V

Drain Current

115

mA

Pulse(Note 2)

460

225

mW

Derate above 25°C

1.8

mW /°C

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Pulse width≦300μs, Duty cycle≦2%



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

556

°C/W



PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

60

V

Drain-Source Leakage Current

1.0

µA

Gate-Source Leakage Current

±100

nA

ON CHARACTERISTICS

(Note)

Gate Threshold Voltage

1.0

2.5

V

Drain-Source On-State Voltage

3.75

V

0.375

Static Drain-Source On-Resistance

7.5

Ω

7.5

DYNAMIC PARAMETERS

Input Capacitance

50

pF

Output Capacitance

25

pF

Reverse Transfer Capacitance

5.0

pF

SWITCHING PARAMETERS

Turn-ON Delay Time

20

ns

Turn-OFF Delay Time

40

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Diode Forward Voltage

1.5

V

Maximum Body-Diode Continuous Current

115

mA

Source Current Pulsed

115

mA

Note: Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%.