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2N80L-TM3-R 数据表(PDF) 4 Page - Unisonic Technologies

部件名 2N80L-TM3-R
功能描述  N-CHANNEL POWER MOSFET
PDF  7 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

2N80L-TM3-R 数据表(HTML) 4 Page - Unisonic Technologies

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2N80
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
4 of 7
www.unisonic.com.tw
QW-R502-480.E
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
800
V
Breakdown Voltage Temperature Coefficient
△
BVDSS △
/TJ
Reference to 25°C,
ID=250µA
0.9
V/°C
Drain-Source Leakage Current
IDSS
VDS=800V, VGS=0V
10
µA
VDS=640V, TC=125°C
100
Gate- Source Leakage Current
Forward
IGSS
VGS=+30V, VDS=0V
+100
nA
Reverse
VGS=-30V, VDS=0V
-100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
3.0
5.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=1.2A
4.8
6.3
Ω
Forward Transconductance (Note 1)
gFS
VDS=50V, ID=1.2A
2.65
S
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V,
f=1.0MHz
550
650
pF
Output Capacitance
COSS
45
60
pF
Reverse Transfer Capacitance
CRSS
7
9
pF
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
VGS=10V VDD=30V,
ID=0.5A, RG=25Ω
(Note 1,2)
50
ns
Rise Time
tR
60
ns
Turn-OFF Delay Time
tD(OFF)
80
ns
Fall-Time
tF
40
ns
Total Gate Charge
QG
VGS=10V, VDS=50V,
ID=1.3A, IG=100µA
(Note 1,2)
18
28
nC
Gate to Source Charge
QGS
6
nC
Gate to Drain Charge
QGD
5
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
Forward Current
IS
2.4
A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
9.6
A
Drain-Source Diode Forward Voltage
VSD
IS=2.4A, VGS=0V
1.4
V
Reverse Recovery Time (Note 1)
tRR
IS=2.4A, VGS=0V,
dIF/dt=100A/µs
480
ns
Reverse Recovery Charge (Note 1)
QRR
2.0
µC
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature



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