2N80

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 7

www.unisonic.com.tw

QW-R502-480.E

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PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

800

V

Gate-Source Voltage

±30

V

Avalanche Current (Note 2)

2.4

A

Drain Current

Continuous

2.4

A

Pulsed (Note 2)

9.6

A

Avalanche Energy

Single Pulsed (Note 3)

180

mJ

Repetitive (Note 2)

8.5

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.0

V/ns

Power Dissipation

TO-220F

24

W

TO-251/TO-252/TO-252D

43

Junction Temperature

+150

°C

Storage Temperature

-55~+150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-220F

62.5

°C/W

TO-251/TO-252/TO-252D

110

Junction to Case

TO-220F

5.2

°C/W

TO-251/TO-252/TO-252D

2.85