2N60G-TND-R datasheet(1/7 Pages) UTC

1 / 7 page

UNISONIC TECHNOLOGIES CO., LTD

2N60

Power MOSFET

www.unisonic.com.tw

1 of 7

QW-R502-053.Z

2A, 600V N-CHANNEL

POWER MOSFET



DESCRIPTION

The UTC 2N60 is a high voltage power MOSFET and

is designed to have better characteristics, such as fast

switching time, low gate charge, low on-state resistance

and have a high rugged avalanche characteristics. This

power MOSFET is usually used at high speed switching

applications in power supplies, PWM motor controls,

high efficient DC to DC converters and bridge circuits.



FEATURES

* RDS(ON) < 5Ω@ VGS = 10V, ID =1A

* Fast switching capability

* Avalanche energy specified

* Improved dv/dt capability, high ruggedness



SYMBOL

类似零件编号 - 2N60G-TND-R

制造商	部件名	数据表	功能描述
Transys Electronics	IRF830	282Kb / 3P	N-CHANNEL ENHANCEMENT MODE
Advanced Power Technolo...	ARF446	61Kb / 4P	N-CHANNEL ENHANCEMENT MODE
Advanced Power Technolo...	ARF450	178Kb / 4P	N-CHANNEL ENHANCEMENT MODE
List of Unclassifed Man...	P2503NVG	594Kb / 8P	N P-Channel Enhancement Mode Enhancement Mode
Guangdong Kexin Industr...	KO3414	53Kb / 2P	N-Channel Enhancement Mode
IXYS Corporation	IXTH60N20L2	155Kb / 5P	N-Channel Enhancement Mode
	IXTH220N075T	190Kb / 5P	N-Channel Enhancement Mode
	IXTR62N15P	212Kb / 2P	N-Channel Enhancement Mode
New Jersey Semi-Conduct...	VN0104N2	68Kb / 1P	N-Channel Enhancement-Mode