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2N90G-TN3-R 数据表(PDF) 4 Page - Unisonic Technologies

部件名 2N90G-TN3-R
功能描述  N-CHANNEL POWER MOSFET
PDF  7 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

2N90G-TN3-R 数据表(HTML) 4 Page - Unisonic Technologies

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2N90
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
4 of 7
www.unisonic.com.tw
QW-R502-478.E
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
900
V
Breakdown Voltage Temperature Coefficient
△
BVDSS △
/TJ Reference to 25°C, ID=250µA
1.0
V/°C
Drain-Source Leakage Current
IDSS
VDS=900V, VGS=0V
10
µA
VDS=720V, TC=125°C
100
Gate- Source Leakage Current
Forward
IGSS
VGS=+30V, VDS=0V
+100 nA
Reverse
VGS=-30V, VDS=0V
-100 nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
3.0
5.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=1.1A
5.6
7.2
Ω
Forward Transconductance
gFS
VDS=50V, ID=1.1A (Note 1)
2.0
S
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
480 520
pF
Output Capacitance
COSS
45
pF
Reverse Transfer Capacitance
CRSS
7
pF
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
VGS=10V, VDD=30V, ID=0.5A,
RG=25Ω
(Note 1,2)
50
ns
Rise Time
tR
65
ns
Turn-OFF Delay Time
tD(OFF)
90
ns
Fall-Time
tF
45
ns
Total Gate Charge
QG
VGS=10V, VDS=50V, ID=1.3A
IG=100µA (Note 1,2)
16
26
nC
Gate to Source Charge
QGS
5.5
nC
Gate to Drain Charge
QGD
4.5
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
Forward Current
IS
2.2
A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
8.8
A
Drain-Source Diode Forward Voltage
VSD
IS=2.2A, VGS=0V
1.4
V
Reverse Recovery Time
trr
IS=2.2A,VGS=0V,dIF/dt=100A/µ
s (Note 1)
400
ns
Reverse Recovery Charge
QRR
1.6
µC
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature



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