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2N60LG-TND-R 数据表(PDF) 4 Page - Unisonic Technologies

部件名 2N60LG-TND-R
功能描述  N-CHANNEL POWER MOSFET
PDF  7 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

2N60LG-TND-R 数据表(HTML) 4 Page - Unisonic Technologies

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2N60L
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
4 of 7
www.unisonic.com.tw
QW-R502-472.M
ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250μA
600
V
Drain-Source Leakage Current
IDSS
VDS = 600V, VGS = 0V
10
μA
Gate-Source Leakage Current
Forward
IGSS
VGS = 30V, VDS = 0V
100
nA
Reverse
VGS = -30V, VDS = 0V
-100
nA
Breakdown Voltage Temperature Coefficient △BVDSS △
/TJ ID=250μA, Referenced to 25°C
0.4
V/°С
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID =1A
4.2
5.0
Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS =25V, VGS =0V,
f =1MHz
300 350
pF
Output Capacitance
COSS
30
50
pF
Reverse Transfer Capacitance
CRSS
7
10
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD (ON)
VDD =300V, ID =2.4A, RG=25Ω
(Note 1, 2)
30
60
ns
Turn-On Rise Time
tR
25
60
ns
Turn-Off Delay Time
tD(OFF)
70
90
ns
Turn-Off Fall Time
tF
30
60
ns
Total Gate Charge
QG
VDS=480V, VGS=10V, ID=2.4A
(Note 1, 2)
30
40
nC
Gate-Source Charge
QGS
8
nC
Gate-Drain Charge
QGD
10
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, ISD = 2.0 A
1.4
V
Continuous Drain-Source Current
ISD
2.0
A
Pulsed Drain-Source Current
ISM
8.0
A
Reverse Recovery Time
tRR
VGS = 0 V, ISD = 2.4A,
di/dt = 100 A/μs (Note1)
180
ns
Reverse Recovery Charge
QRR
0.72
μC
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%.
2. Essentially independent of operating temperature.



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