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1N90L-TN3-R 数据表(PDF) 4 Page - Unisonic Technologies

部件名 1N90L-TN3-R
功能描述  N-CHANNEL POWER MOSFET
PDF  7 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

1N90L-TN3-R 数据表(HTML) 4 Page - Unisonic Technologies

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1N90
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
4 of 7
www.unisonic.com.tw
QW-R502-496.E
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
900
V
Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ
ID=250μA,
Referenced to 25°C
1.0
V/°C
Drain-Source Leakage Current
IDSS
VDS=900V, VGS=0V
10
µA
VDS=720V, TC=125°C
100
µA
Gate-Source Leakage Current
Forward
IGSS
VDS=0V ,VGS=30V
100
nA
Reverse
VDS=0V ,VGS=-30V
-100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
3.0
5.0
V
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=0.5A
12
16
Ω
Forward Transconductance
gFS
VDS=50V, ID=0.5A (Note 1)
0.75
S
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=25V,VGS=0V,f=1.0MHz
200
250
pF
Output Capacitance
COSS
22
26
pF
Reverse Transfer Capacitance
CRSS
5
7
pF
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
VDD=30V, ID=1.0A, RG=25Ω
(Note 1,2)
37
45
ns
Turn-ON Rise Time
tR
10
40
ns
Turn-OFF Delay Time
tD(OFF)
50
60
ns
Turn-OFF Fall Time
tF
26
60
ns
Total Gate Charge
QG
VDS=120V, VGS=10V, ID=1.0A
(Note 1,2)
25
35
nC
Gate-Source Charge
QGS
3
nC
Gate-Drain Charge
QGD
4
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
1.0
A
Maximum Body-Diode Pulsed Current
ISM
4.0
A
Drain-Source Diode Forward Voltage
VSD
IS =1.0A, VGS=0V
1.4
V
Body Diode Reverse Recovery Time
tRR
VGS=0V, IS=1.0A,
dIF/dt=100A/μs (Note 1)
300
ns
Body Diode Reverse Recovery Charge
QRR
0.6
μC
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature.



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