3N60

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 9

www.unisonic.com.tw

QW-R502-110.H



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

600

V

Gate-Source Voltage

±30

V

Avalanche Current (Note 2)

3.0

A

Continuous Drain Current

3.0

A

Pulsed Drain Current (Note 2)

12

A

Avalanche Energy

Single Pulsed (Note 3)

200

mJ

Repetitive (Note 2)

7.5

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

Power Dissipation

TO-220

75

W

TO-220F/TO-220F1

TO-220F3

34

TO-251/TO-252

50

Junction Temperature

+150

°C

Operating Temperature

-55 ~ +150

°C

Storage Temperature

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

RATING

UNIT

Junction to Ambient

TO-220

62.5

°C/W

TO-220F/TO-220F1

TO-220F3

62.5

TO-251/TO-252

110

Junction to Case

TO-220

1.67

°C/W

TO-220F/TO-220F1

TO-220F3

3.68

TO-251/TO-252

2.5