1N90

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 7

www.unisonic.com.tw

QW-R502-496.E



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

900

V

Gate-Source Voltage

±30

V

Drain Current

Continuous

1.0

A

Pulsed (Note 2)

4.0

A

Avalanche Current (Note 2)

1.0

A

Avalanche Energy

Single Pulsed (Note 3)

90

mJ

Repetitive (Note 2)

4.5

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.0

V/ns

Power Dissipation

TO-220

40

W

TO-220F/TO-220F1

TO-220F3

23

W

TO-220F2

24

W

TO-251/TO-251S

TO-251S2/TO-251S4

TO-252/TO-252D

28

W

Junction Temperature

+150

°C

Storage Temperature

-55~+150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature.



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-220

62.5

°C/W

TO-220F/TO-220F1

TO-220F2/TO-220F3

62.5

°C/W

TO-251/TO-251S

TO-251S2/TO-251S4

TO-252/TO-252D

110

°C/W

Junction to Case

TO-220

3.13

°C/W

TO-220F/TO-220F1

TO-220F3

5.35

°C/W

TO-220F2

5.3

°C/W

TO-251/TO-251S

TO-251S2/TO-251S4

TO-252/TO-252D

4.53

°C/W