3N90G-TQ2-R datasheet(2/6 Pages) UTC

2 / 6 page

3N90

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-290.D



ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage (VGS=0V)

VDSS

900

Drain-Gate Voltage (RG=20kΩ)

VDGR

900

Gate-Source Voltage

VGSS

±30

Gate-Source Breakdown Voltage (IGS=±1mA)

BVGSO

30(MIN)

Continuous Drain Current

Pulsed Drain Current

IDM

Single Pulse Avalanche Energy (Note 3)

EAS

180

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

Power Dissipation

TO-220/TO-263

TO-230

TO-220F/TO-220F1

TO-220F2

Junction Temperature

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Pulse width limited by TJ(MAX)

3. L = 40mH, IAS = 3A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

4. ISD≦3A, di/dt≦200A/μs, VDD≦BVDSS, TJ≦TJ(MAX).



THERMAL DATA

PARAMETER

SYMBOL

RATING

UNIT

Junction to Ambient

θJA

62.5

°C/W

Junction to Case

TO-220/ TO-263

TO-230

θJC

1.38

°C/W

TO-220F/TO-220F1

TO-220F2

4.9

3N90G-TQ2-R 数据表(PDF) 2 Page - Unisonic Technologies

3N90G-TQ2-R 数据表(HTML) 2 Page - Unisonic Technologies

Html Pages

1 2 3 4 5 6

数据表下载