4N60G-TQ2-R datasheet(7/9 Pages) UTC

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4N60G-TQ2-R 数据表(PDF) 7 Page - Unisonic Technologies

部件名	4N60G-TQ2-R

功能描述	N-CHANNEL ENHANCEMENT MODE MOSFET

PDF	9 Pages

Scroll/Zoom	100%

制造商	UTC [Unisonic Technologies]

网页	http://www.utc-ic.com

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4N60G-TQ2-R 数据表(HTML) 7 Page - Unisonic Technologies

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7 / 9 page

4N60

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

7 of 9

www.unisonic.com.tw

QW-R502-061.Z



TYPICAL CHARACTERISTICS

0.1

Drain-to-Source Voltage, VDS (V)

On-State Characteristics

0.1

Gate-Source Voltage, VGS (V)

Transfer Characteristics

150°С

Notes:

1. VDS=50V

2. 250µs Pulse Test

0.1

25°С

5.0V

Notes:

1. 250µs Pulse Test

2. TC=25°С

VGS

Top:

10V

5.5V

5 V Bottorm:5.0V

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链接网址

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